elektronische bauelemente sse90n06-10p 90a , 60v , r ds(on) 9.9 m ? n-channel enhancement mode mosfet 12-aug-2011 rev.b page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. rohs compliant product a suffix of ?-c? specifies halogen and lead-free description these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. features ? low r ds(on) provides higher efficiency and extends battery life. ? low thermal impedance copper leadframe to-220p saves board space. ? fast switch speed. ? high performance trench technology. application dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. absolute maximum ratings (t a =25 c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds 60 v gate-source voltage v gs 20 v continuous drain current 1 t c = 25 c i d 90 a pulsed drain current 2 i dm 240 a continuous source current (diode conduction) a i s 90 a power dissipation 1 t c = 25 c p d 120 w operating junction and st orage temperature range t j , t stg -55~175 c thermal resistance rating maximum junction to ambient 1 r ? ja 62.5 maximum junction to case r ? jc 1.25 c / w notes 1 package limited. 2 pulse width limited by maximum junction temperature. g 1 s 3 d 2 n-channel millimete r millimete r ref. min. max. ref. min. max. a 7.90 8.10 n 0.75 0.95 b 9.45 9.65 o 0.66 0.86 c 9.87 10.47 p 13.50 14.50 d - 11.50 q 2.44 3.44 e 1.06 1.46 r 3.50 3.70 f 2.60 3.00 s 1.15 1.45 g 6.30 6.70 t 4.30 4.70 h 8.35 8.75 u - 2.7 j1.60 t yp . v 1.89 3.09 k 1.10 1.30 w 0.40 0.60 l 1.17 1.37 x 2.60 3.60 m- 1.50 to-220p i f m q q u v b r t s p x k 2 3 1 c a d e g h j l n o w
elektronische bauelemente sse90n06-10p 90a , 60v , r ds(on) 9.9 m ? n-channel enhancement mode mosfet 12-aug-2011 rev.b page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a =25 c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static gate-threshold voltage v gs(th) 1 - 3.5 v v ds =v gs , i d =250ua gate-body leakage i gss - - 100 na v ds =0, v gs =20v - - 1 v ds =48v, v gs =0 zero gate voltage drain current i dss - - 25 ua v ds =48v, v gs =0, t j =55 c on-state drain current 1 i d(on) 120 - - a v ds =5v, v gs =10v - - 9.9 v gs =10v, i d =30a drain-source on-resistance 1 r ds(on) - - 13 m ? v gs =4.5v, i d =20a forward transconductance 1 g fs - 30 - s v ds =15v, i d =20a diode forward voltage v sd - 0.8 - v i s =20a, v gs =0 dynamic 2 input capacitance c iss - 5887 - output capacitance c oss - 567 - reverse transfer capacitance c rss - 352 - pf v ds =15v, v gs =0, f=1mhz total gate charge q g - 77 - gate-source charge q gs - 21 - gate-drain charge q gd - 40 - nc v ds =30v, v gs =4.5v, i d =20a turn-on delay time t d(on) - 23 - rise time t r - 80 - turn-off delay time t d(off) - 226 - fall time t f - 99 - ns v dd =30v, v gen =10v, r l =1.5 ? , i d =20a, r gen =6 ? notes: 1 pulse test pw Q 300 us duty cycle Q 2%. 2 guaranteed by design, not s ubject to production testing.
elektronische bauelemente sse90n06-10p 90a , 60v , r ds(on) 9.9 m ? n-channel enhancement mode mosfet 12-aug-2011 rev.b page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
elektronische bauelemente sse90n06-10p 90a , 60v , r ds(on) 9.9 m ? n-channel enhancement mode mosfet 12-aug-2011 rev.b page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
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